Difference between revisions of "Dislocation Density Based Hardening"

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A dislocation density based polycrystal plasticity model [[Hardening Laws|hardening law]] (see Toth at al<ref name="Toth">Toth et. al., "Strain hardening at large strains as predicted by dislocation based polycrystal plasticity model," ''J. Eng. Mat. and Techn.'', '''124''', 71-77 (2002)</ref>.
A dislocation density based polycrystal plasticity model [[Hardening Laws|hardening law]] (see Estrin et al<ref name="Estrin">Estrin et. al., "A dislocation-based model for all hardening stages in large strain deformation," ''Acta mater.'', '''46''', 5509-5522 (1998)</ref> and Toth et al<ref name="Toth">Toth et. al., "Strain hardening at large strains as predicted by dislocation based polycrystal plasticity model," ''J. Eng. Mat. and Techn.'', '''124''', 71-77 (2002)</ref>).




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| flim || Saturation value of f at large strain, f<sub>lim</sub>. Unitless.
| flim || Saturation value of f at large strain, f<sub>lim</sub>. Unitless.
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| fsto ||  
| fsto || The rate of variation of f, with resolved shear strain rate.
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| sto || Reference strain rate.
| sto || Reference strain rate.
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* If using temperature dependence, temperature must be set in Kelvin. The reference temperature, T<sub>0</sub>, is set using the simulations  [[Thermal Calculations#Stress Free Temperature|stress free temperature]] and not set using [[Hardening Laws|hardening law]] properties.
* If using temperature dependence, temperature must be absolute set in Kelvin. The reference temperature, T<sub>0</sub>, is set using the simulations  [[Thermal Calculations#Stress Free Temperature|stress free temperature]] and not set using [[Hardening Laws|hardening law]] properties.
* Default material parameters are for copper, see Lemiale et al<ref name="Lemiale">Lemiale et. al., "Grain refinement under high strain rate impact: A numerical approach," ''Comp. Mater. Sci.'', '''48''', 124-132 (2010)</ref>.


== History Data ==
== History Data ==
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The current yield stress (&sigma;<sub>y</sub>) in MPa, and the current plastic strain rate (d&alpha;/dt in 1/sec). These variables are stored as history variables #1, #2, and #3.
The current yield stress (&sigma;<sub>y</sub>) in MPa, and the current plastic strain rate (d&alpha;/dt in 1/sec). These variables are stored as history variables #1, #2, and #3.


The fourth history variable is the average grain size (d) in metres.  
The #4 history variable is the average grain size (d) in metres.  


The fifth and sixth history variables are the dislocation densities in the cell interior and wall respectively.  
The #5 and #6 history variables are the dislocation densities in the cell interior and wall respectively.  





Revision as of 22:17, 16 January 2014

A dislocation density based polycrystal plasticity model hardening law (see Estrin et al[1] and Toth et al[2]).


The model allows for the tracking of dislocation density and provides a response variable that describes the grain size (or dislocation cell size) based on the variation in dislocation density. It considers the cell or grain to be made of two phases; a cell wall and cell interior, each with its own dislocation density. These two distinct dislocation densities are the internal variables of the model. The total dislocation density is made up of these two variables added together via a rule of mixtures:

      [math]\displaystyle{ \rho_{t} = f\rho_{w} + (1-f)\rho_{c} }[/math]


Where ρt is the total dislocation density, f is the volume fraction of the cell walls, ρc and ρw are the dislocation densities in the cell interior and cell walls respectively.

The grain or cell size is determined as proportional to the inverse of the square root of the total dislocation density:

      [math]\displaystyle{ d = \frac{K}{\sqrt{\rho_{t}}} }[/math]

Where d is the average cell size and K is a proportionality constant. The relation for volume fraction of the dislocation density in the cell walls, f, is associated with the shear strain rate, γr, and the saturation value of f at large strains and initial volume fraction, finf and fo respectively, which are constants. \~γ^{r}, is the rate of variation of f with resolved shear strain rate, $ \tilde{\gamma} $.

      [math]\displaystyle{ f = f_{\infty} + (f_{o} - f_{\infty}) e^{\frac{-\gamma^{r}}{\tilde{\gamma}^{r}}} }[/math]

For the kinetic equations, the resolved shear stress is related to the resolved plastic shear strain rate. The two different dislocation densities give rise to two scalar stresses in the cell wall and cell interiors.

      [math]\displaystyle{ \tau^{r}_{c} = \alpha G b \sqrt{\rho_{c}}\bigg(\frac{\dot{\gamma^{r}_{c}}}{\dot{\gamma_{0}}}\bigg ) ^\frac{1}{m} }[/math]

      [math]\displaystyle{ \tau^{r}_{w} = \alpha G b \sqrt{\rho_{w}}\bigg(\frac{\dot{\gamma^{r}_{w}}}{\dot{\gamma_{0}}}\bigg ) ^\frac{1}{m} }[/math]

Where α is a constant, G is the shear modulus, b is the Burgers vector (a constant dependent on the crystal structure of the metal, i.e. fcc, hpc, bcc), $ \dot{\gamma_{0}} $ is a reference shear strain rate, \dot{γ}^r_c is the shear strain rate of the cell interior, $ \dot{\gamma^{r}_{w}} $ is the shear strain rate of the cell wall, 1/m is the strain rate sensitivity parameter, where m is inversely proportional to the absolute temperature:

      [math]\displaystyle{ m = \frac{A}{T} }[/math]

Where A is a constant. The overall behavior of the composite structure, described with two dislocation densities, is defined by the scalar quantity obtained using the rule of mixtures below.

      [math]\displaystyle{ \tau^{r} = f \tau^{r}_{w} + (1-f) \tau^{r}_{c} }[/math]

The evolution equations for the dislocation density in the cell interior and cell wall are given below. Their evolution rate is a function of addition, subtraction and annihilation of dislocations. The growth of both can be attributed to Frank-Read sources at the cell wall or interior interface. The loss of cell interior dislocations can also be attributed to the movement from cell interior into the cell wall. The annihilation of cell dislocations is governed by cross-slip, whereby positive and negative dislocations, or “out of phase” dislocations cancel each other out, this is the last term in each equation.

      [math]\displaystyle{ \dot{\rho}_{c} = \alpha^{\ast}\frac{1}{\sqrt{3}}\frac{\sqrt{\rho_{w}}}{b}\dot{\gamma_{w}} - \beta^{\ast}\frac{6 \dot{\gamma_{c}}}{b d (1-f) ^\frac{1}{3}} - k_{o} \bigg ( \frac{\dot{\gamma_{c}}}{\dot{\gamma_{0}}} \bigg ) ^{- \frac{1}{n}} \dot{\gamma_{c}} \rho_{c} }[/math]

      [math]\displaystyle{ \dot{\rho}_{w} = \frac{6 \beta^{\ast} \dot{\gamma}_{c} (1-f)^{\frac{2}{3}}}{bdf} + \frac{\sqrt{3}\beta^{\ast} \dot{\gamma}_{c} (1-f) \sqrt{\rho_{w}}}{fb} - k_{o} \bigg ( \frac{\dot{\gamma_{w}}}{\dot{\gamma_{0}}} \bigg ) ^{- \frac{1}{n}} \dot{\gamma_{w}} \rho_{w} }[/math]


Where β*,α*,ko are constants, and similar to m, n is the strain rate sensitivity parameter, where n is inversely proportional to the absolute temperature:

      [math]\displaystyle{ n = \frac{B}{T} }[/math]

As the interface between the cell interior and cell wall must satisfy strain compatibility, the resolved shear strain rate is equal within each phase of the composite structure.

      [math]\displaystyle{ \dot{\gamma}^{r}_{c} = \dot{\gamma}^{r}_{w} = \dot{\gamma}^{r} }[/math]

The strength of this physically-based microstructure model is that it can be incorporated into a numerical model that operates at the continuum level, and through the material constitutive behavior provide information at a microscopic level (microstructure). It was formulated to be applied to processes that incur severe plastic deformation, and makes assumptions based on this. The dislocation cell size is assumed to be the same size as the subgrains. It also assumes that these dislocation cells or subgrains will ultimately replace the larger grains. This assumption is adequate in processes where there is large grain refinement.


Hardening Law Properties

This hardening law can set the following properties:

Property Description
tayM Taylor Factor
rhoW Initial dislocation density in cell wall, ρw
rhoC Initial dislocation density in cell interior, ρt
fo Initial volume fraction, fo. Unitless.
flim Saturation value of f at large strain, flim. Unitless.
fsto The rate of variation of f, with resolved shear strain rate.
sto Reference strain rate.
m Strain rate sensitivity exponent.
n Strain rate sensitivity exponent.
alp material constant, α.
burg Burgers Vector, b.
K1 Proportionality constant between total dislocation density and grain size, K.
alpstar Material constant, α*.
betastar Material constant, β*.
Atd Temperature proportionality constant for m. Units K^{-1}.
Btd Temperature proportionality constant for n. Units K^{-1}.
tempDepend Turn temperature dependence of m and n on or off. 0 is off, 1 is on. If 1, must have conduction on for effect. *
MMG Shear Modulus. Enter in units of MPa.
  • If using temperature dependence, temperature must be absolute set in Kelvin. The reference temperature, T0, is set using the simulations stress free temperature and not set using hardening law properties.
  • Default material parameters are for copper, see Lemiale et al[3].

History Data

This hardening law defines six history variables, which are the cumulative equivalent plastic strain (absolute) defined as:

      [math]\displaystyle{ \alpha = \sum \sqrt{2\over3}\ ||d\varepsilon_p|| }[/math]

where dεp is the incremental plastic strain tensor in one time step.

The current yield stress (σy) in MPa, and the current plastic strain rate (dα/dt in 1/sec). These variables are stored as history variables #1, #2, and #3.

The #4 history variable is the average grain size (d) in metres.

The #5 and #6 history variables are the dislocation densities in the cell interior and wall respectively.


References

  1. Estrin et. al., "A dislocation-based model for all hardening stages in large strain deformation," Acta mater., 46, 5509-5522 (1998)
  2. Toth et. al., "Strain hardening at large strains as predicted by dislocation based polycrystal plasticity model," J. Eng. Mat. and Techn., 124, 71-77 (2002)
  3. Lemiale et. al., "Grain refinement under high strain rate impact: A numerical approach," Comp. Mater. Sci., 48, 124-132 (2010)